Overview
A germanium (Ge) diode behaves similarly to a silicon diode but has some differences due to its material properties.

• Forward Bias: When a positive voltage is applied to the anode, the current starts to flow after a lower threshold voltage (around 0.3V for germanium diodes) and increases exponentially with increasing voltage.

• Reverse Bias: In reverse bias, the current remains small until the reverse breakdown voltage is reached, after which the current increases sharply.

Germanium diodes have a lower forward threshold voltage compared to silicon diodes.

Significance

• Rectification in low-voltage power supplies.

• Signal detection in communication devices.

• Testing and calibration of germanium diodes for specific applications.